Installation STE3N2 MBE System in Ioffe Physico-Technical Institute
Completed technological works in the commissioning the STE3N2 Molecular-Beam Epitaxy System, designed for the Ioffe Physico-Technical Institute of Russian Academy of Science.
Two-chamber MBE system is designed for III nitrides growth using a ammonia source of active nitrogen and equipped with a unique cruise pumping system. Within the technology works, more than 30 processes for was grown epitaxial multilayer heterostructures AlN/AlGaN/GaN was grown. Electrical parameters obtained on test structures show a world-class results: