Molecular-Beam Epitaxy Systems of STE series are designed for wide range А³В⁵, wide band А²В⁶ compounds and А³N semiconductor compounds growth, and is made with consideration to latest achievements in the field of molecular beam epitaxy of conventional semiconductors  systems. MBE systems can be employed for fundamental and applied research, R&D activities of А³В⁵/А²В⁶ and A³N epitaxial structures. Those are modern technological platforms for precise growth of epitaxial layers on wafers with diameter of 2”, 3” or 100 mm.

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