Molecular-Beam Epitaxy Systems (MBE) Molecular-Beam Epitaxy Systems of STE series are designed for wide range А3В5, wide band А2В6 compounds and А3N semiconductor compounds growth, and is made with consideration to latest achievements in the field of molecular beam epitaxy of conventional semiconductors systems. MBE systems can be employed for fundamental and applied research, R&D activities of А3В5/А2В6 and A3N epitaxial structures. Those are modern technological platforms for precise growth of epitaxial layers on wafers with diameter of 2”, 3” or 100 mm. SemiTEq provide unique solutions based on its own scientific research for your specific goals. |
|
- Home
- About Us
-
News
- ElectronTechExpo 2021
- V Anniversary International Forum «Microelectronics 2019»
- 4th International Workshop on Ultraviolet Materials and Devices
- Exhibition VacuumTechExpo 2019
- XXIII Symposium «Nanophysics and Nanoelectronics»
- EuroMBE 2019 workshop
- Exhibition VacuumTechExpo 2018
- 19th European Workshop on Molecular Beam Epitaxy
- International Symposium «Nanophysics and Nanoelectronics”
- III-N 2017 Conference
- Merry Christmas and Happy New Year!
- SemiTEq released upgraded e-Beam evaporation system STE EB71
- SemiTEq released enhanced STE35 MBE system
- 18th European Molecular Beam Epitaxy workshop
- 5th CS International conference 2015
- India National Workshop on III-nitride Materials and Devices
- SemiTEq JSC has contracted for R&D MBE System supply for the University of Toronto
- Semicon Russia 2013
- EURO MBE 2013
- Open Innovations 2012
- MBE2012
- Products
-
Application Lab
- STE EB71: E-beam evaporation results
- Sub-μm Gate technology
- STE ICP: Plasma etching and PECVD
- MBE STE3526: MBE growth of laser heterostructures
- МВЕ STE3526: Hybrid heterostructures growth with III-V/II-VI heterovalent interface
- MBE STE3N: Characteristics of III-Nitrides growth
- Heterostructures based on GaAs
- Service & Support
- Partners
- Contacts
