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STE3526 Two-reactor MBE cluster tool system for growth of hybrid heterostructures А3В5/А2В6

Two-reactor STE3526 MBE system is specially designed for growth of hybrid heterostructures А3В52В6 and other applications taking into account all specific of MBE growth of these material systems.

STE3526 is intended for R&D activities and pilot production of epi-wafers.

Specific feature of the system is providing of ultra-pure UHV substrate transport from А3В5-reactor to А2В6 one avoiding uncontrolled contaminations of the growth interface.

Growth reactors based on STE35 platform are equipped by valve cracker cells for V and VI Group elements as well as all necessary in-situ analytic tools.

• “lab-to-fab” concept, allowing activities from fundamental research to pilot production of heterostructures
• special effusion cells for Al (cold lip) for stable operation and Ga (hot lip) providing low oval defects density
• all necessary tools for in-situ monitoring of growth process in basic configuration of the system
• specially designed growth manipulator, providing high temperature uniformity and heating/cooling rate dynamic
• effective technological support during installation including basic process transfer
• simple system operation and regular technical maintenance

Ultimate residual vacuum in growth chamber after bakeout, Torr

<5×10-11 

Max. diameter of substrate, mm

100 or 3×2” block

Thickness and compound non-uniformity for 100 mm wafer, %

±1

“Source-to-substrate” distance, mm

135÷210

Effusion cells shutters design

Rotary mechanism based on magnetically couplet rotary motion with non-impact drive

Material of shutters blades

Tantalum, molybdenum or PBN (Option)

Design of growth manipulator heating element

PBN/PG/PBN

Max. process temperature of growth manipulator, not less, °С

900

(1200 for NH3-MBE)

Temperature of substrate degassing in preparation chamber, not less, °С

650

(1100 for III-Nitrides)

Bakeout temperature of growth chamber, not less, °С

200

Ion pumps capacity, not less, l/s:

– growth chamber (TMP for III-N)

– preparation chamber

– load lock

 

800 (2000)

500

300