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STE3526 Two-reactor MBE System for growth of hybrid heterostructures А3В5/А2В6

Two-reactor STE3526 MBE System is specially designed for growth of hybrid heterostructures А3В52В6 taking into account all specific of MBE growth of these material systems.
STE3526 is intended for R&D activities and pilot production of epitaxial nanostructures on the base of wide band А2В6 materials (Cd(Zn)Se/ZnMgSSe etc.) using of high-quality GaAs buffer layers, previously grown in А3В5-reactor.
The specific feature of the System is providing of ultra-pure UHV transport of wafers from А3В5-reactor to А2В6 one avoiding uncontrolled contaminations of GaAs growth interface.

• “lab to fab” ideology, allowing carrying out activities from fundamental research to pilot production of heterostructures
• special effusion cells for Al (cold lip) for stable operation and Ga (hot lip) for obtaining of structures with low density of oval defects
• valved cracker cells for V and VI group materials
• sufficient tools for in-situ monitoring of growth process in basic configuration
• specially designed growth manipulator, providing high temperature uniformity and heating/cooling rate dynamic
• rapid process start up due to intensive technological support
• simple System operation and regular technical maintenance

Ultimate residual vacuum in growth chamber

after bakeout

<5·10-11 Torr

Max. diameter of wafer

100 mm or 3х2” block

“Effusion cell to wafer” distance

135÷210 mm

Effusion cells shutters design

rotary mechanism based on magnetically

couplet rotary motion with non-impact

pneumatic drive

Material of shutters blades

tantalum (standard),

molybdenum, PBN — optional

Design of growth manipulator heating element

PBN/PG/PBN

Max. process temperature of growth

manipulator, not less

900°С

Temperature of wafer degassing in preparation

chamber, not less

650°С

Bakeout temperature of growth chamber,

not less

200°С

Ion pumps capacity:

– growth chamber

– preparation chamber

– load lock

800 l/s

500 l/s

300 l/s