STE3526 Two-reactor MBE System for growth of hybrid heterostructures А3В5/А2В6

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STE3526 Two-reactor MBE cluster tool system for growth of hybrid heterostructures А3В5/А2В6

Two-reactor STE3526 MBE system is specially designed for growth of hybrid heterostructures А³В⁵/А²В⁶ and other applications taking into account all specific of MBE growth of these material systems.

STE3526 is intended for R&D activities and pilot production of epi-wafers.

Specific feature of the system is providing of ultra-pure UHV substrate transport from А³В⁵-reactor to А²В⁶ one avoiding uncontrolled contaminations of the growth interface.

Growth reactors based on STE35 platform are equipped by valve cracker cells for V and VI Group elements as well as all necessary in-situ analytic tools.

• “lab-to-fab” concept, allowing activities from fundamental research to pilot production of heterostructures
• special effusion cells for Al (cold lip) for stable operation and Ga (hot lip) providing low oval defects density
• all necessary tools for in-situ monitoring of growth process in basic configuration of the system
• specially designed growth manipulator, providing high temperature uniformity and heating/cooling rate dynamic
• effective technological support during installation including basic process transfer
• simple system operation and regular technical maintenance

Ultimate residual vacuum in growth chamber after bakeout, Torr

<5×10^-11

Max. diameter of substrate, mm

100 or 3×2” block

Thickness and compound non-uniformity for 100 mm wafer, %

±1

“Source-to-substrate” distance, mm

135÷210

Effusion cells shutters design

Rotary mechanism based on magnetically couplet rotary motion with non-impact drive

Material of shutters blades

Tantalum, molybdenum or PBN (Option)

Design of growth manipulator heating element

PBN/PG/PBN

Max. process temperature of growth manipulator, not less, ^°С

900

(1200 for NH₃-MBE)

Temperature of substrate degassing in preparation chamber, not less, ^°С

650

(1100 for III-Nitrides)

Bakeout temperature of growth chamber, not less, ^°С

200

Ion pumps capacity, not less, l/s:

– growth chamber (TMP for III-N)

– preparation chamber

– load lock

800 (2000)

500

300