STE35 Three-chamber MBE System for А3В5 growth

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STE35 Three-chamber MBE System for conventional semiconductors growth of A3B5 and A3N

STE35 is a modern technological platform for precise growth of epitaxial layers on substrates up to ∅100mm, as well as on three 2” substrates at one run. STE35 MBE System is intended for R&D activities and pilot production of epitaxial heterostructures in “lab-to-fab” mode for InAlGaAsSb or InGaAlN material systems using РА-МВЕ as well as NH₃-MBE inspecial version. STE35 was developed by SemiTEq as a result of more than 25 years’ experience of our key MBE experts. Optimal growth geometry allows to achieve excellent thickness and composition non-uniformity on ∅ 100mm wafer.

Additional uniformity optimization is possible due to changing of “source-to-substrate” distance (unique vertical movement of the wafer and heater at the same time) in case of using effusion cells from other manufacturers.

STE35 is a three-chamber UHV System including individually pumped growth chamber, buffer/outgassing chamber for pre-growth preparation and load-lock chamber. All the chambers are connected through vacuum gates and common semiautomatic substrate transfer system. The growth process is controlled by automation system based on original software. It allows to control process manually or in auto mode using programmed recipe.

• growth chamber with a vertical growth geometry pumped by ion/cryopump for conventional III-Vs or TMP/сryopumpfor III-Nitrides and titanium sublimation pump
• 10×63CF ports for effusion cells with shutters, 1 central 63CF and up to 3×40CF extraports without shutters for V-group material valve crackers or gas sources; IR pyrometer or laser interferometry ports
• all effusion cells orifices are visible through several viewports on the growth chamber
• single LN₂ cryopanel, effectively surrounding the growth volume (additional cryopanel of growth manipulator for NH₃-MBE)
• growth manipulator heating element based on PBN/PG/PBN with high uniformity and fast up and down dynamic
• set of molecular sources, including 5 effusion cells and source for group V (valved cracker, nitrogen plasma source or ammonia injector)
• maximum substrate temperature – not less 900^°С (not less 1200^°С for NH₃-MBE)
• in-situ monitoring tools: RHEED, IR Pyrometer, RGA and Laser Interferometer (for III-Nitrides growth)
• preparation chamber with storage cassette for substrate holders (7 pcs.) and wafers degassing stage, special port for atomic Hydrogen source
• load lock chamber with storage cassette for substrate holders (8 pcs.) with quick access door equipped with glove box
• set of substrate holders
• appropriate UHV gauges
• bakeout system (up to 200^°C), without hot spot formation
• control electronics
• process control system based on original software

• “lab-to-fab” concept, allowing activities from fundamental research to pilot production of heterostructures
• special effusion cells for Al (cold lip) for stable operation and Ga (hot lip) providing low oval defects density
• all necessary tools for in-situ monitoring of growth process in basic configuration of the system
• specially designed growth manipulator, providing high temperature uniformity and heating/cooling rate dynamic
• effective technological support during installation including basic process transfer
• simple system operation and regular technical maintenance

Ultimate residual vacuum in growth chamber after bakeout, Torr

<5×10^-11

Max. diameter of substrate, mm

100 or 3×2” block

Thickness and compound non-uniformity for 100 mm wafer, %

±1

“Source-to-substrate” distance, mm

135÷210

Effusion cells shutters design

Rotary mechanism based on magnetically couplet rotary motion with non-impact drive

Material of shutters blades

Tantalum, molybdenum or PBN (Option)

Design of growth manipulator heating element

PBN/PG/PBN

Max. process temperature of growth manipulator, not less, ^°С

900

(1200 for NH₃-MBE)

Temperature of substrate degassing in preparation chamber, not less, ^°С

650

(1100 for III-Nitrides)

Bakeout temperature of growth chamber, not less, ^°С

200

Ion pumps capacity, not less, l/s:

– growth chamber (TMP for III-N)

– preparation chamber

– load lock

800 (2000)

500

300