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STE35 Three-chamber MBE System for А3В5 growth

STE35 is a modern technological platform for precise growth of epitaxial layers on wafers with diameter of 2”, 3”, 100 mm, as well as three 2” wafers on the same platen.
MBE system STE35 is intended for R&D activities and pilot production of epitaxial structures in “lab-to-lab” mode in InAlGaAsSb/GaAs systems.

System has specific feature allowing significant correction of growth geometry by vertical movement of growth manipulator along with the wafer platen. It allows to combine two growth positions in one chamber: one is “research” where growth can be carried out without wafer rotation, with active use of RHEED and providing acceptable uniformity of epitaxial layer. The other one is “production” position, where growth is carried out with rotation only and high layers uniformity is provided for large wafer diameters.

• growth chamber with a vertical growth geometry, growth chamber pumping by ion pump, cryopanel and sublimation pump
• 8 ports for effusion cells with shutters + 2 extra ports (without shutters) for valve crackers
• large surface single LN2 cryopanel, effectively surrounding the growth volume
• design of growth manipulator heating element: PBN/PG/PBN
• base set of materials sources – 7 effusion cells + valve source of V-th or VI-th group
• all necessary equipment for in-situ monitoring for growth process: RHEED, IR pyrometer, mass-spectrometer
• preparation chamber with storage cassette for wafer holders and wafers bakeout stage
• Load Lock chamber with storage cassette for (up to 8 pcs.) wafer holders with quick access door which equipped with glove box
• set of substrate holders
• measuring System of pre- and ultra-high vacuum
• bakeout system till 200°C, without hot spot formation
• control electronics
• process control system

• “lab to fab” ideology, allowing carrying out activities from fundamental research to pilot production of heterostructures
• special effusion cells for Al (cold lip) for stable operation and Ga (hot lip) for obtaining of structures with low density of oval defects
• sufficient tools for in-situ monitoring of growth process in basic configuration
• specially designed growth manipulator, providing high temperature uniformity and heating/cooling rate dynamic
• rapid process start up due to intensive technological support
• simple System operation and regular technical maintenance

Ultimate residual vacuum in growth chamber

after bakeout

<5·10-11 Torr

Max. diameter of wafer

100 mm or 3х2” block

“Effusion cell to wafer” distance

135÷210 mm

Effusion cells shutters design

rotary mechanism based on magnetically

couplet rotary motion with non-impact

pneumatic drive

Material of shutters blades

tantalum (standard),

molybdenum, PBN — optional

Design of growth manipulator heating element

PBN/PG/PBN

Max. process temperature of growth

manipulator, not less

900°С

Temperature of wafer degassing in preparation

chamber, not less

650°С

Bakeout temperature of growth chamber,

not less

200°С

Ion pumps capacity:

– growth chamber

– preparation chamber

– load lock

800 l/s

500 l/s

300 l/s