STE3N Advanced MBE Systems for high-temperature epitaxial growth of III-Nitrides using ammonia

MBE systems of STE3N* series are specially designed taking into account specifics of A3N materials growth and provide extremely wide range of available growth parameters (effective nitrogen flux, substrate temperature, vacuum level during the growth run). STE3N* design provides extremely high temperatures on the substrate (>1200°C) as well as reliable work of heating stage during a long growth cycle. It allows to grow high-quality, thick AlN/AlGaN buffer layers using ammonia as active nitrogen source. This technology results in growth of active layers with extremely low dislocation density, record for MBE.

STE3N* series is represented in basic two- (STE3N2) and three-chamber (STE3N3) versions equipped with buffer preparation chamber. Besides the NH3 injector, STE3N* systems might be equipped by nitrogen plasma source (option) for growing active layers of InGaN, InAlN and AlGaN:Mg in combination with ammonia.

Due to the patented design of the substrate holder and the heating stage of growth manipulator, STE3N* provides a very high heating uniformity of all types substrates used now for III-Nitrides growth (sapphire, SiC, Si, AlN). Maximum substrate diameter 100 mm allows to use STE3N* for fundamental and applied R&D as well as for pilot production of high quality epi-wafers based on III-Nitrides.

• special advanced design and well approved growth reactor providing long-term and reliable operation of key system components under NH3 environment as well as extreme substrate temperatures
• extra-large LN2 cryopanels for effective ammonia pumping providing continuous growth under high NH3 load
• patented Al source of special design with extended lifecycle, providing growth rate of AlN more than 2 μm/h under ammonia environment without metal creeping
• ability to grow GaN epi-layers comparable in quality with MOCVD ones grown on mismatched substrates
• all necessary tools for in-situ monitoring of growth process in basic configuration of the system
• patented substrates holder design, providing high temperature uniformity across the wafer
• high-temperature growth manipulator, providing continuous growth of high-quality AlN layers atthe growth temperatures not less than 1200°С
• ability of changing “source-to-substrate” distance in the range of 210-135 mm to optimize uniformity using different types of cells and wafer OD
• compact “footprint” for STE3N2 two-chamber version
• effective technological support during installation including basic process transfer
• simple system operation as well as regular technical maintenance

• preparation chamber with storage cassette for substrate holders (7 pcs.) and degassing stage, special port for atomic Hydrogen source
• additional effusion cells (crucibles of 5, 15, 25, 35, 60 cc)
• power supply units and PID regulators for additional effusion cells
• RF-plasma nitrogen source with N2 gas supply line with MFC
• SiH4 gas injector and gas supply line with MFC
• Bayard-Alpert type Beam Flux Monitor (BFM)
• hydrogen atom source for additional substrate cleaning in the preparation chamber, supplied along with the turbomolecular pump
• Ti-sublimation pump with power supply unit
• additional set of substrate holders including adapters for samples of non-standard size
• starting set of materials for system operation (Ga, Al, In, NH3, N2, Si, Mg, sapphire wafers withTi-metallization etc.)
• liquid nitrogen supply system based on phase separator
• additional kit of spares and accessories

Ultimate vacuum level in the growth chamber after the System bakeout, Torr


Maximum substrate diameter, mm


Thickness and composition non-uniformity for 3” wafer using NH3, %


Type of substrate heating element


Maximum substrate surface temperature, °С


Pressure in growth chamber, Torr:

– at substrate temperature 970°С and ammonia flow 400 sccm

– at substrate temperature 1200°С and ammonia flow 100 sccm

– at substrate temperature 500°С and ammonia flow 1000 sccm





Growth geometry

Adjustable, “source-to-substrate” distance 135-210 mm

Integrated analytics

RHEED, BFM (Option), RGA, Laser Interferometer, IR Pyrometer

Max. temperature of substrate annealing in preparation chamber, not less, °C


Max ammonia working flux, sccm


Bakeout temperature of the growth chamber,not less, °С

200, no hot spot formation

Automation of technological process

Manual control by the operator through the control interface or carrying out the process by recipes