STE3N Series MBE Systems for III-Nitrides growth

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STE3N Advanced MBE Systems for high-temperature epitaxial growth of III-Nitrides using ammonia

MBE systems of STE3N* series are specially designed taking into account specifics of A³N materials growth and provide extremely wide range of available growth parameters (effective nitrogen flux, substrate temperature, vacuum level during the growth run). STE3N* design provides extremely high temperatures on the substrate (>1200^°C) as well as reliable work of heating stage during a long growth cycle. It allows to grow high-quality, thick AlN/AlGaN buffer layers using ammonia as active nitrogen source. This technology results in growth of active layers with extremely low dislocation density, record for MBE.

STE3N* series is represented in basic two- (STE3N2) and three-chamber (STE3N3) versions equipped with buffer preparation chamber. Besides the NH₃ injector, STE3N* systems might be equipped by nitrogen plasma source (option) for growing active layers of InGaN, InAlN and AlGaN:Mg in combination with ammonia.

Due to the patented design of the substrate holder and the heating stage of growth manipulator, STE3N* provides a very high heating uniformity of all types substrates used now for III-Nitrides growth (sapphire, SiC, Si, AlN). Maximum substrate diameter 100 mm allows to use STE3N* for fundamental and applied R&D as well as for pilot production of high quality epi-wafers based on III-Nitrides.

• special advanced design and well approved growth reactor providing long-term and reliable operation of key system components under NH₃ environment as well as extreme substrate temperatures
• extra-large LN₂ cryopanels for effective ammonia pumping providing continuous growth under high NH₃ load
• patented Al source of special design with extended lifecycle, providing growth rate of AlN more than 2 μm/h under ammonia environment without metal creeping
• ability to grow GaN epi-layers comparable in quality with MOCVD ones grown on mismatched substrates
• all necessary tools for in-situ monitoring of growth process in basic configuration of the system
• patented substrates holder design, providing high temperature uniformity across the wafer
• high-temperature growth manipulator, providing continuous growth of high-quality AlN layers atthe growth temperatures not less than 1200^°С
• ability of changing “source-to-substrate” distance in the range of 210-135 mm to optimize uniformity using different types of cells and wafer OD
• compact “footprint” for STE3N2 two-chamber version
• effective technological support during installation including basic process transfer
• simple system operation as well as regular technical maintenance

• preparation chamber with storage cassette for substrate holders (7 pcs.) and degassing stage, special port for atomic Hydrogen source
• additional effusion cells (crucibles of 5, 15, 25, 35, 60 cc)
• power supply units and PID regulators for additional effusion cells
• RF-plasma nitrogen source with N₂ gas supply line with MFC
• SiH₄ gas injector and gas supply line with MFC
• Bayard-Alpert type Beam Flux Monitor (BFM)
• hydrogen atom source for additional substrate cleaning in the preparation chamber, supplied along with the turbomolecular pump
• Ti-sublimation pump with power supply unit
• additional set of substrate holders including adapters for samples of non-standard size
• starting set of materials for system operation (Ga, Al, In, NH₃, N₂, Si, Mg, sapphire wafers withTi-metallization etc.)
• liquid nitrogen supply system based on phase separator
• additional kit of spares and accessories

Ultimate vacuum level in the growth chamber after the System bakeout, Torr

<5×10^-11

Maximum substrate diameter, mm

100

Thickness and composition non-uniformity for 3” wafer using NH₃, %

±1

Type of substrate heating element

PBN/PG/PBN

Maximum substrate surface temperature,^°С

1200

Pressure in growth chamber, Torr:

– at substrate temperature 970^°С and ammonia flow 400 sccm

– at substrate temperature 1200^°С and ammonia flow 100 sccm

– at substrate temperature 500^°С and ammonia flow 1000 sccm

<1×10^-5

<5×10^-6

<1×10^-5

Growth geometry

Adjustable, “source-to-substrate” distance 135-210 mm

Integrated analytics

RHEED, BFM (Option), RGA, Laser Interferometer, IR Pyrometer

Max. temperature of substrate annealing in preparation chamber, not less, ^°C

1100

Max ammonia working flux, sccm

1000

Bakeout temperature of the growth chamber,not less, ^°С

200, no hot spot formation

Automation of technological process

Manual control by the operator through the control interface or carrying out the process by recipes