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STE75 New compact MBE System for III-V, II-VI and III-N compounds growth

Compact new STE75 MBE system is designed for growth of А3В5, wide band А2В6 and А3N compounds (in special version). STE75 is intended as compact, versatile and power tool for wide range of R&D in the field of modern semiconductor applications based on А3В52В6 and III-Nitrides.

• simple integration to the UHV cluster tool
• all necessary instruments for in-situ monitoring of growth parametersare included in basic Syatem configuration
• high wafer heating and cooling rates due to features of growth manipulator heating stage, low temperature difference between control thermo couple and real surface temperature
• compact “footprint”
• extremely low LN2 consumption (less than 10-15 l/h!)
• effective technological support during installation including basic process transfer
• simple System operation and regular technical maintenance

• vertical growth geometry of the growth chamber
• ten (10) water cooled 63CF ports for effusion cells with shutters + 3 pcs. 40CF & 1 pcs. 63CF (without shutters) — 14 ports total
• easy access for effusion cell shutter assembly
• compact single LN2 cryopanel, effectively surrounding the growth volume
• growth manipulator heating stage: PBN/PG/PBN
• standard set of molecular sources — 8 effusion cells + valved cracker for group V (or VI) or N2 plasma cell
• versatile pumping system flexible adapted to the application
• all necessary tools for in-situ monitoring of growth process data: RHEED, IR pyrometer, Bayard-Alpert Beam Flux Monitor, Laser Interferometer (if necessary)
• preparation chamber with storage cassette for wafer holders and degassingstage with an independent pumping system based on ion pump
• Load Lock chamber with quick access door and pumping system based on turbomolecular pump
• set of substrate holders
• appropriate UHV gauges
• bakeout system (200°C), without hot spot formation
• control electronics
• process control system

Ultimate vacuum in growth chamber after bakeout

<5·10-11 Torr

Max substrate diameter

3” (76,2 mm)

Maximum substrate temperature with rotation:

– for compounds A3B5/A2B6

– for compounds A3N


not less than 900°С

not less than 1250°С

Preparation chamber heating stage maxtemperature for substrate degassing

650°С (1100°С in III-Nitrides version)