STE75 New compact MBE System for III-V, II-VI and III-N compounds growth

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STE75 Versatile compact MBE system for III-V, II-VI and III-N compounds growth

Versatile compact three-chamber STE75 MBE system is designed for growth of А³В⁵, wide band А²В⁶and А³N compounds (in special version). System design considers the latest MBE achievements in these materials systems.

STE75 is intended as compact, versatile and power tool for wide range of R&D in the field of modern semiconductor applications based on А³В⁵/А²В⁶ and III-Nitrides.

• vertical growth geometry of the growth chamber
• 10 water-cooled 63CF ports for effusion cells with shutters, 3 pcs. 40CF and 1 pcs. 63CF without shutters – 14 ports total
• easy access to effusion cell shutter assembly
• compact single LN₂ cryopanel, effectively surrounding the growth volume
• growth manipulator outgassing stage based on PBN/PG/PBN heating element
• standard set of molecular sources, including 5 effusion cells, valved cracker for group V (VI) or N₂plasma cell
• pumping subsystem flexible to material application
• all necessary tools for in-situ monitoring of growth process data: RHEED, IR Pyrometer, Bayard-Alpert Beam Flux Monitor, Laser Interferometer (option)
• preparation chamber with storage cassette for wafer holders (6 pcs.) and degassing stage with an independent pumping system based on ion pump: special port for atomic Hydrogen port
• load lock chamber with storage cassette for substrate holders (3 pcs.), quick access door and pumping system based on turbomolecular pump
• set of substrate holders
• appropriate UHV gauges
• bakeout system (up to 200^°C), without hot spot formation
• control electronics
• process control system

• simple integration into the UHV cluster tool
• all necessary instruments for in-situ monitoring of growth parameters are included in basic system configuration
• high substrate heating & cooling rates due to features of growth manipulator heating stage, low temperature difference between control thermocouple and real surface temperature
• compact “footprint”
• extremely low LN₂ consumption (less than 10-15 l/h!)
• effective technological support during installation including basic process transfer
• simple system operation and regular technical maintenance

Ultimate vacuum in growth chamber after bakeout, Torr	<5×10^-11
Max. substrate diameter, mm	76,2 (3”)
Thickness and composition non-uniformity for 3” substrate, %	±1
Design of growth manipulator heating element	PBN/PG/PBN
Maximum substrate temperature with rotation, ^°С: – for A³B⁵/A²B⁶ compounds, not less – for A³N compounds, not less	900 1200
Preparation chamber heating stage max temperature for substrate degassing, ^°С	650 (1100 in version for III-Nitrides)
Bakeout temperature of growth chamber, not less, ^°С	200