ICP Etching and PECVD Systems
New generation of STE ICP series is intended in two basic modifications: STE ICP200E (Plasma Chemical Etching) and STE ICP200D (ICP-PECVD). Maximum diameter of wafers is up to 200 mm with possibility of using free shape samples, which allows to use these systems for both in tensive R&D and for small-scale production. The platform has gained technological seamless aluminum process chamber and a new load lock chamber, specially configured for installation through the clean room wall. Upgraded smaller reactor volume with thought out gas supply system allows to reduce the pumping time, which is optimal to the etching recipe with fast change of process gases. Routine maintenance in reactor became much more easier due to easy access to all internal components. Special table design provides efficient helium cooling for long etching processes and precision heating with thermal stabilization for PECVD. System’s software with flexible programming process allows to realize Low Damage Dielectric Deposition and Etching.