New generation of STE ICP series is presented in two basic modifications: STE ICP200E (Plasma Chemical Etching) and STE ICP200D (ICP-PECVD). Maximum diameter of treated wafers is up to 200 mm with possibility of using free shape samples, which allows to use these systems for both intensive R&D and small-scale production. STE ICP platform allows its integration into a HV cluster tool as well as “through wall” installation of the load-lock in the clean room. 

Flexible system’s software allows to realize all modern processes including Low Damage Dielectric Deposition and Etching.