language

STE ICP200D PECVD Systems

Automated Systems for plasma chemical deposition of dielectrics (SiNx, SiO2, etc.) in inductive coupled plasma

 

Ultimate remaining pressure in the deposition reactor, Torr

<5×10-6

Load Lock

(B)

Water cooling of reactor walls

(B)

Quantity of simultaneously processed wafers:

diameter 2’’
diameter 3’’
diameter 100 mm
diameter 150 mm
diameter 200 mm
free shape

 

7
4
1
1
1
(B)

Samples heating during the process, °С

400

Max Low Frequency generator power (0,1-2 MHz), W

600

ICP max generator power (13.56 MHz), W

1200 (B)

2500 (О)

Deposition uniformity on 100mm, % from the center

±2

Quantity of gas lines in corrosion-resistant version, pcs.

4(B)

Interferometer

(О)

Vacuum system
Transfer of wafers to electrode
Process

(B)
(О)
(B)

Flat ICP source with automatic matching unit is used for plasma generation. Wafers are placed on heated table, where either RF bias (13,56 MHz) or LF potential can be supplied, which fixed frequency can be chosen (at the stage of the order) from the range of 100÷2000 kHz. Use of low­frequency potential on heating table in ICP generation mode ensures possibility to adjust tension of dielectric films during deposition process.