STE ICP200D PECVD (plasma enhanced chemical vapor deposition) Systems

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STE ICP200D Automated PECVD System of dielectric films

Upgraded smaller reactor volume with optimized gas supply system allows to improve significantly the uniformity and reproducibility of the process as well as reducing the pumpdown time.

Convenient routine maintenance of the system became easier provided due to a simple access to all internal components. Special bottom electrode design provides precise wafer heating control by IR Pyrometer for PECVD.

Ultimate pressure in reactor, Torr

<5×10^-6

Load-Lock

Yes

Water cooling of reactor walls

Yes

Quantity of processed wafers at a one time:

diameter 2’’

diameter 3’’

diameter 100 mm

diameter 150 mm

diameter 200 mm

free shape

7

4

1

1

1

Available

RIE generator max power (13.56 MHz), W

Not available

Bottom electrode generator max power (RF 13/56 MHz or LF300÷500 kHz), W

600

ICP generator max power (13.56 MHz), W

1200

2500 (Оption)

Maximum allowed value of bias applied to the surface of lower electrode, kV

1

Wafers cooling during the process (controlled by the temperature of the coolant inside RIE electrode)

Not available

Samples heating during the process, ^°С, not less

400

Etching (deposition) non-uniformity on ∅100mm wafer,% from the center

±1

Quantity of gas lines in corrosion-resistant version, pcs.

6

Laser Interferometer for etching (deposition) rate control

Оption

Automatic wafer transport into the reactor and process controlby receipt

Yes

Flat ICP source with automatic matching unit is used for plasma generation. Wafers are placed onheated table-electrode, where either RF (13,56 MHz) or LF (300÷500 kHz) bias voltage up to 600Wcan be applied. Use of low frequency potential on heating table during ICP mode ensures additional possibility to adjust dielectric films tension during deposition process.