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STE ICP200E ICP Etching Systems

New generation of STE ICP series is intended in two basic modifications: STE ICP200E (Plasma Chemical Etching) and STE ICP200D (PECVD). Maximum diameter of wafers is up to 200 mm with possibility of using free shape samples, which allows to use these systems for both intensive R&D and for small-scale production. The platform has gained technological seamless aluminum process chamber and a new load lock chamber, specially configured for installation through the clean room wall. Upgraded smaller reactor volume with thought out gas supply system allows to reduce the pumping time, which is optimal to the etching recipe with fast change of process gases. Routine maintenance in reactor became much more easier due to easy access to all internal components. Special table design provides efficient helium cooling for long etching processes and precision heating with thermal stabilization for PECVD. System’s software with flexible programming process allows to realize Low Damage Dielectric Deposition and Etching. Etching /deposition process control is carried out by using laser interferometer with the automatic possibility to stop the process by end point. Optical plasma control system is provided as an option.

Automated Systems for plasma chemical etching in combined plasma of capacitive and inductive discharge

System completely utilize all specific features of controlled plasma etching processes of semiconduc­tor, dielectric and metal layers. It’s rather good for both chlorine and fluorine chemistry. The system allows two types of plasma excitation: capacitive (flat water­cooled electrode) and inductive (flat ICP­-source). 

Main feature of these units is a possibility to combine two modes of plasma­chemical etching: reac­ tive­ion etching and etching in inductively coupled plasma. Generators are automatically matched, thus ensuring stable plasma burning mode within the wide range of power values. Temperature range for etching: –70 °C (refrigerant), +80 °C (hot water).
Systems design provides the possibility of replacing the top ICP electrode by metal disc with holes for gas, which allows to change configuration of RIE&ICP Plasma Etching System to the simplified System of plasma etching in capacitive discharge only, and conversely to equip the simplified version by ICP electrode. 

Ultimate pressure in the process reactor, Torr

<5×10-6

Load-Lock

(B)

Water cooling of reactor walls

(B)

Quantity of simultaneously processed wafers:

diameter 2’’

diameter 3’’

diameter 100mm

diameter 150mm

diameter 200mm

free shape

 

7

4

1

1

1

(B)

RIE max generator power (13.56 MHz), W

600 (B)

1200 (O)

ICP max generator power (13.56 MHz), W

1200 (B)

2500 (O)

Maximum allowed value of induced potential on the surface of RIE electrode, kV

1

Samples cooling during the process

water+He (B)

LN2+ He (О)

Etching uniformity for wafer diameter 100 mm, % from the center

±2

Quantity of gas lines in corrosion-resistant version, pcs.

4(B)

Interferometer

(О)

Vacuum system

Transfer of wafers to electrode

Process

(B)

(О)

(B)