STE EB71 e-Beam evaporation system for high-quality thin-film deposition
The system was designed in accordance with “lab-to-fab” approach and is intended for both intensive R&D activities and pilot production.
System is intended for deposition on single wafer with diameter up to 200 mm as well as for 3×∅3” or 6×∅2” wafers installed on a spherical-profile holder, considering specific features of “lift-off” process.
• process chamber is made of stainless steel with ConFlat sealings, integrated wall water cooling and dry pumping system based on powerful ion pump 500 l/s
• contact resistance achieved for HEMTs based on GaAs/InGaAs/AlGaAs and GaN/AlGaN is 0.1÷0.25 and0.3÷0.5 Om×mm, respectively (after contact annealing in STE RTA100 system)
Thickness distribution from the center of the holder ∅180 mm (3×∅3’’ wafers) for Ti layer, obtained at STE EB71 (rotation, “mask” technology).