SemiTEq — STE MS900 Magnetron sputtering and/or thermal evaporation systems for batch wafer processing

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STE MS900 Magnetron sputtering and/or thermal evaporation systems for batch wafer processing

STE MS900 Versatile HV PVD system for magnetron sputtering and/or thermal evaporation of multicomponent thin films for batch wafer processing

System allows to sputter multicomponent layers (metals, resistant layers, ITO layers etc.) on wafer heated up to 700^°C. System is designed for both active R&D and small-scale production. Optimized high vacuum stainless steel reactor consists of stationary source unit and lifting top cover. Updated ergonomic design of reactor is equipped with lifting mechanism for convenient routine maintenance of evaporator unit and internal screening.

• HV stainless steel cylindrical reactor with lifting of the top flange and integrated water-cooling
• 5 ports for magnetron sources with targets up to ∅200 mm or 6 ports for targets up to ∅150 mm, one of ports can be used for Ion Beam source in any system configuration
• carousel type substrate holder with the possibility of varying the samples sizes
• maximum quantity of sputtered wafers at the same process is 5×∅200 mm, 6×∅150 mm and up to 30 wafers 60×48 mm
• possibility of substrate holder overturn by 180^°for double-sided deposition (option)
• 2 magnetron sources with target diameter of up to ∅200 mm and shutters, 2 power supplies (DC and RF) with automatic reconnection between the magnetrons in the basic configuration
• Ion Beam source (energy 20÷300 eV) for substrate cleaning prior the deposition
• 3 gas lines with automatic gas flow controllers including a corrosion-proof performance bypass line
• process gases: Ar, H₂, O₂, N₂
• ability to install the witness-sample for in-situ resistance measurement
• automatic substrate on carousel positioning under the certain sputtering source
• up to 5 quartz crystal monitor (QCM) for a thickness control with a certain resonator head for each magnetron position
• automated process control system with appropriate interlocks controlled by the energy resources (air, water,process gases) as well as process data
• operating modes: automatic by recipe, semi-automatic, manual

• multifunctional system for vacuum deposition with different sources for R&D and small-scale production
• optimized system ergonomics allows convenient operation and maintenance
• sputtering geometry (from bottom to up) allows to minimize particles density on the sample surface
• automated process control by QCM, in-situ resistance measuring, etc.

Ultimate pressure in process reactor, not less than, Torr	5х10^-7
Time to achieve the process vacuum (<5×10^-6Torr), not more than, min	25
Maximum quantity of magnetron sources	5×∅200mm or 6×∅150mm
Ion Beam source with ion energy 20÷300 еV	Оption
Substrate holder overturn by 180^°	Оption
Quantity of one time processed wafers: - ∅200 mm - ∅150 mm - 60×48 mm	5 6 30
Non-uniformity of sputtered film across 200 mm wafer, %	±2,5
Carousel rotation speed during the deposition process, rpm	0÷20
Wafer heating temperature, up to, ^°С	700
The pumping system performance: - turbomolecular pump, not less, l/s - dry scroll pump, not less, m³/h	1300 35
Process automation	Yes