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STE RTA100 Rapid thermal annealing system

System for rapid thermal annealing of semiconductor wafers in inert atmosphere

STE RTA100 is intended for R&D activities and pilot production. Maximum diameter of wafers is 100 mm. Wafer is loaded into the chamber manually through upper quick access door and placed on heat-compensating graphite table. Heater system is based on linear halogen lamps and located under the table.

This design ensures uniform wafer heating, having heterogeneous absorption of infrared emission along its surface (for example, wafer with formed metal topology).

System allows carrying out relatively short-time processes with temperatures up to 1000°С and maximum heating rate up to 40°С/s. For applications not related with contact annealing, the system may be operated without graphite table, which is increased heating rate up to 200°С/s. Annealing time at maximum temperature is up to 10 minutes. The chamber is made of aluminum and has integrated water cooling 100 mm quartz window is provided for monitoring the wafer during annealing process and can be used also for installation of optional optical Pyrometer.

STE RTA100 provides high run to run reproducibility and has long time and excellent references from the end users – manufacturers of electronic components based on III-V compounds.

• thermal annealing in controlled gas environment with continuous purging of the chamber by inert gas
• thermal annealing in controlled inert gas atmosphere with automatic pressure keeping

• aluminum process chamber with water cooling
• preliminary pumping of the process chamber by membrane or scroll (option) pump
• heating power operation by thyristor controller
• automated pumping and gas purging of the chamber, allowing “one button push“ process operation
• multi-stage annealing process by built-in PID controller
• monitoring of the heating table temperature by two control thermocouples
• optical Pyrometer for additional control of wafer surface temperature (option), possibility of X-Y temperature scanning along wafer surface through the quartz window
• high run-to-run reproducibility
• easy operation and maintenance

Ultimate pressure in the process chamber, Torr

<10;

<5×10-3 (Оption)

Pumping speed, m3/h

5

Water cooling of reactor walls

Yes

Max. wafer diameter, mm

100

Max. heating rate without graphite holder, °С/s

200

Max. heating rate with graphite holder, °С/s

40

Max. heating temperature, °С

1000

Heating uniformity for 100 mm wafer, %

±2

Annealing in vacuum

Not available

Annealing in oxygen

Not available

Quantity of thermocouples, pcs.

2

Optical pyrometer

Оption

Full automation of annealing process

Yes