System for rapid thermal annealing process of semiconductor wafers in inert atmosphere

System is intended for R&D activities and pilot production. Maximum diameter of wafers is 100mm. Wafer is loaded to chamber manually through side quick access door and placed on heat-compensating table made of pyrolytic graphite. There is heater based on system of linear halogen lamps under table. This design ensures uniform wafer heating, having
heterogeneous absorption of infrared emission along its surface (for example, wafer with formed topology).

System allows carrying out relatively short-time processes with the temperature up to 900°С and maximum heating rate up to 40°С/sec. Annealing time at maximum temperature is up to 10 minutes. The chamber is made of stainless steel and has water cooled walls. Quartz viewport is provided for monitoring the sample during loading and annealing (also can be used for installation of IR pyrometer).