МВЕ STE3526: Hybrid heterostructures growth with III-V/II-VI heterovalent interface
MBE group of Professor Sergey Ivanov at the Ioffe Physical Technical Institute operates with two-reactor MBE complex STE3526 and obtain the world class results.
- MBE growth of coherent heterovalent AlSb/InAs/(Zn,Mn)Te quantum wells with magnetized two-dimensional electron gas.
Experimental evidences of giant Zeeman effect for 2D electrons in the InAs QW have been obtained via studies of spin-polarized photocurrents
Ya.V. Terent’ev et al., APL 99, 072111 (2011)
- AlGaAs/GaAs/ZnSe/(Zn)Mn(S)Se double quantum wells for spin injection.
MBE formation of neutral & thermodynamically equilibrium GaAs/ZnSe heterovalent interface. Initiation of ZnSe growth on GaAs (2x4)As surface decorated by a background Se flux - (2x1)As&Se RHEED pattern.
I.V. Sedova et al., Int. Conf. MBE 2012, Nara, Japan, (2012)
60% of tunneling spin-injection from ZnMnSe to double GaAs QWs has been demonstrated by magnetoluminescence studies.
F. Liaci et al., phys. stat. sol. (c) 9, 1790 (2012)
 Ioffe Physical Technical Institute of Russian Academy of Sciences (RAS) is one the largest institutions in Russia for R&D in semiconductor physics and technology.