SemiTEq - SemiTEq — MBE STE3526: MBE growth of laser heterostructures


Application Lab STE EB71: E-beam evaporation results Sub-μm Gate technology STE ICP: Plasma etching and PECVD MBE STE3526: MBE growth of laser heterostructures МВЕ STE3526: Hybrid heterostructures growth with III-V/II-VI heterovalent interface MBE STE3N: Characteristics of III-Nitrides growth Heterostructures based on GaAs	MBE STE3526: MBE growth of laser heterostructures MBE group of Professor Sergey Ivanov at the Ioffe Physical Technical Institute operates with two-reactor MBE complex STE3526 and obtain the world class results. MBE growth and studies of low-threshold ZnMgSSe-based QD laser heterostructures for efficient II-VI/III-N violet-green electrically pumped laser converters (530-550nm) Concept of local mismatch strain compensation Graded-index asymmetrical SL waveguide (GIW) I.V. Sedova et al., Appl. Phys. Lett. 98, 171103 (2011) Optimization of the ZnSe/GaAs initial growth stage (SF density ~104 cm-2) S.V. Gronin et al., phys. stat. sol. (c) 9, 1833 (2012) Violet-green electrically pumped laser converters Maximum pulse output power Pmax=154 mW (RT), llas=543 nm, quantum conversion efficiency - h=25.4% S.V. Sorokin et al., Electron. Lett. 48, 118 (2012)