Sub-μm Gate technology Sub-μm Gate technology developed in "Svetlana-Rost" JSC on SemiTEq equipment: STE3N2 – DHFET GaN wafer growth
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- V Anniversary International Forum «Microelectronics 2019»
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- 19th European Workshop on Molecular Beam Epitaxy
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- Merry Christmas and Happy New Year!
- SemiTEq released upgraded e-Beam evaporation system STE EB71
- SemiTEq released enhanced STE35 MBE system
- 18th European Molecular Beam Epitaxy workshop
- 5th CS International conference 2015
- India National Workshop on III-nitride Materials and Devices
- SemiTEq JSC has contracted for R&D MBE System supply for the University of Toronto
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- МВЕ STE3526: Hybrid heterostructures growth with III-V/II-VI heterovalent interface
- MBE STE3N: Characteristics of III-Nitrides growth
- Heterostructures based on GaAs
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