SemiTEq JSC take pert in the 17th International Conference on Molecular Beam Epitaxy (MBE2012) which was held on 23-28 September, 2012 in Nara, Japan. It is a forum for all aspects of MBE growth as well as science, technology and application of epitaxial heterostructures and nanostructures.

Stanislav Petrov, Head of Application Lab SemiTEq JSC take part in the conference and represent the technological results of the company by the oral presentation: "Low dislocation density and high mobility GaN layers for DHFET channels grown by high-temperature ammonia-MBE".

The first international conference on molecular beam epitaxy was held in Paris, France 1978 followed by the 2nd conference at Tokyo in 1982. The conference has been held every two years.