01-03 February 2017 at the Moscow State University hosted the 11th All-Russian Conference "Gallium nitride, indium and aluminum: structures and devices." The event included exhibition and a round table dedicated to the industrial production of products related to III-N compounds: research and technological equipment, raw materials and substrates, electronic devices, modules and end devices. Dr. Stanislav Petrov, Head of Application Lab in SemiTEq JSC, presented on the Conference the oral report "Investigation of the effect of surfactant Ga at a high temperature ammonia MBE AlN layers on the properties of nitride heterostructures".