Two-chamber MBE system is designed for III nitrides growth using a ammonia source of active nitrogen and equipped with a unique cruise pumping system. Within the technology works, more than 30 processes for was grown epitaxial multilayer heterostructures AlN/AlGaN/GaN was grown. Electrical parameters obtained on test structures show a world-class results:

• for DHEMT-structure: the mobility of 1400 ¸ 1530 cm²/V×s at layer concentration n = 1.5 ¸ 1.15×1013 cm^-2;
• for "bulk" silicon-doped GaN layer thickness of 1.5 mm: the mobility of 383 cm²/V×s at a concentration of n = 6,8×1017 cm^-3