MBE system is designed for III nitrides growth using a ammonia source of active nitrogen. Within the technological start held 9 epitaxial processes to grow multilayer heterostructures AlN / AlGaN / GaN, of which 5 in order to calibrate the process parameters set and the 4-test DHEMT-structure.
Electrical parameters measured on test structures demonstrate the level of instrumental heterostructures:
mobility of 910 ¸ 1190 cm²/V×s at layer concentration n = 2.3 ¸ 1.4 × 1013 cm^-2 ;
surface roughness of grown heterostructures (rms = 0.8 ¸ 1.2 nm);

and fully express the readiness of the installation STE3N3 the regular holding of technological work.