STE ICP200E ICP Etching Systems

STE ICP200D Plasma chemical deposition system in inductively coupled plasma

STE ICP200D system based on STE ICP200 platform and intended for both intensive R&D and serial production.

Platform implements all modern features of controlled plasma chemical deposition of dielectric (SiNx, SiO2 и т.д.) in inductively coupled plasma.

Modernized smaller volume reactor with optimized gas distribution system significantly improves wafer processing uniformity and reproducibility, as well as reduces pre-pumping time.

Easy access to all system components facilitates routine maintenance.

7×Ø2”
4×Ø3”
1×Ø100mm
1×Ø150mm
1×Ø200mm

REACTOR

Ultimate pressure <5⋅10^-6Torr
Flat ICP source
Supply of RF or LF bias voltage
RF or LF generator power up to 1000W (2000W*)
ICP generator (13,56MHz) power up to 1000W (3000W*)
Table heating up to 450°C
Reactor walls heating

GAS SUPPLY SYSTEM

6 (12*) gas lines in corrosion-resistant version, including some with bypass
Shut-off vacuum gate valve

VACUUM SYSTEM

Pumping system depends on a platform application (turbomolecular pump, scroll forepump)

PROCESS CONTROL

Process automation with intermittent alternating gas supply
Automatic reactor cleaning
Programming and storage of technological recipes

*optional

Etching/deposition uniformity ±2% for wafer Ø4’’
Optimized gas supply system
Carrying out the technological process by recipe
Installation "Though the wall"
Automatic wafer loading
Cassette wafer loading capability*

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* optional