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STE ICP200E Plasma chemical etching system in combined capacitive and inductive discharge

STE ICP200E system is intended of plasma chemical etching processes using fluorine or chlorine chemistry in combined plasma of capacitive and inductive discharge.

  • 7×Ø2”
  • 4×Ø3”
  • 1×Ø100mm
  • 1×Ø150mm
  • 1×Ø200mm

REACTOR

  • Ultimate pressure <510-6Torr
  • Flat ICP source
  • RF generator power of RIE electrode up to 500W (1000W*)
  • ICP generator (13,56MHz) power up to 1000W (3000W*)
  • Wafer temperature regulated by coolant temperature in RIE electrode from -30°C to +80°C (+180°C*)
  • Reactor walls heating


GAS SUPPLY SYSTEM

 

  • 6 (12*) gas lines in corrosion-resistant version, including some with bypass
  • Shut-off vacuum gate valve

VACUUM SYSTEM 

 

  • Pumping system depends on a platform application (turbomolecular pump, scroll forepump)

PROCESS CONTROL

 

  • Process automation with intermittent alternating gas supply
  • Automatic reactor cleaning
  • Programming and storage of technological recipes 

 

*optional

  • Etching/deposition uniformity ±2% for wafer Ø4’’
  • Optimized gas supply system
  • Carrying out the technological process by recipe
  • Installation "Though the wall"
  • Automatic wafer loading
  • Cassette wafer loading capability*

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* optional