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STE PECVD200 Plasma enhanced chemical vapor deposition system

STE PECVD200 is designed for Plasma-enhanced chemical vapor deposition (PECVD) of dielectrics (SiNx, SiO2, etc.) in capacitive discharge on wafers up to 200mm.
The system design allows switching RF potential to disc-shower as well as working table.

  • 7×Ø2”
  • 4×Ø3”
  • 1×Ø100mm
  • 1×Ø150mm
  • 1×Ø200mm

REACTOR

  • Ultimate pressure <510-3Torr
  • Gas shower head with the possibility of supplying RF potential
  • Supply of RF or LF bias voltage
  • Generator power up to 500W
  • Table heating up to 450°C
  • Reactor walls heating


GAS SUPPLY SYSTEM

 

  • 6 (12*) gas lines in corrosion-resistant version, including some with bypass
  • Shut-off vacuum gate valve

VACUUM SYSTEM 

 

  • Pumping system depends on a platform application (turbomolecular pump, scroll forepump)

PROCESS CONTROL

 

  • Process automation with intermittent alternating gas supply
  • Automatic reactor cleaning
  • Programming and storage of technological recipes 

 

*optional

  • Etching/deposition uniformity ±2% for wafer Ø4’’
  • Optimized gas supply system
  • Carrying out the technological process by recipe
  • Installation "Though the wall"
  • Automatic wafer loading
  • Cassette wafer loading capability*

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* optional