STE ICP200E ICP Etching Systems

STE RIE200 Reactive ion etching system

STE RIE200 system based on STE ICP200 platform and intended for RIE processes using chlorine and fluorine chemistry.
Platform implements all modern features of controlled RIE of semiconductors, dielectric and metal films.

7×Ø2”
4×Ø3”
1×Ø100mm
1×Ø150mm
1×Ø200mm

REACTOR

Ultimate pressure <5⋅10^-6Torr
Gas shower head with the possibility of supplying RF potential
RF generator power up to 500W (1000W*)
Wafer temperature regulated by coolant temperature in RIE electrode from -30°C to +80°C (+180°C*)
Reactor walls heating

GAS SUPPLY SYSTEM

6 (12*) gas lines in corrosion-resistant version, including some with bypass
Shut-off vacuum gate valve

VACUUM SYSTEM

Pumping system depends on a platform application (turbomolecular pump, scroll forepump)

PROCESS CONTROL

Process automation with intermittent alternating gas supply
Automatic reactor cleaning
Programming and storage of technological recipes

*optional

Etching/deposition uniformity ±2% for wafer Ø4’’
Optimized gas supply system
Carrying out the technological process by recipe
Installation "Though the wall"
Automatic wafer loading
Cassette wafer loading capability*

__________________________________

* optional