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STE35 Advanced MBE platform for A3B5 | A2B6 | A3N compound semiconductors growth
STE35 is a modern semi-automated technological platform for precise growth of A3B5, A2B6 or A3N compounds on substrates up to Ø150mm. Platform is specially designed for R&D and pilot production of epitaxial heterostructures.
STE35 has flexible configuration and can be equipped with various growth chambers with 10 or 12 ports for molecular sources. Optimal growth geometry allows to achieve excellence thickness and composition uniformity.
SYSTEM CAPACITY
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GROWTH CHAMBER
- Ultimate pressure <5∙10-11Torr
- 10 or 12 shuttered ports for sources
- LN2 consumption less than 20-25 l/h*
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SOURCES
- Valved cracker sources for As, Sb, P
- CBr4 gas injector with heating capability
- N2 plasma source
- Single filament effusion cells
- Effusion cells for Al, Ga, In, etc. With dual filament (SUMO or conic crucibles)
- Doping cells for Si, Be, Mg, etc.
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LOAD-LOCK CHAMBER
- Manual/semi-automatic loading
- Quick access door with inspection viewport
- Storage cassette for substrate holders for up to 8 positions
- Substrate holders pre-heating system
- Inert atmosphere glove box hermetically connected to quick access door
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GROWTH MANIPULATOR
- PBN/PG/PBN heater providing high temperature uniformity and heating/cooling rate dynamics
- Substrate heating up to 1200°C
- Adjustable source-to-substrate distance
- Substrate holder rotation speed up to 1rps
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BUFFER CHAMBER
- Storage cassette for substrate holders for up to 7 positions
- PBN/PG/PBN heater providing high temperature uniformity and heating/cooling rate dynamics
- Substrate heating up to 650°C
- Water-cooling system
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VACUUM SYSTEM
- Main LN2 cryopanel surrounding the epitaxial growth zone
- Additional LN2 cryopanel surrounding the growth manipulator
- Pumping system configuration depends on STE35 system application (UHV cryogenic, ion, corrosive-resistant turbomolecular pumps, scroll forepump)
- Bayard-Alpert vacuum gauge
- Pirani vacuum gauge
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ANALYTIC SYSTEM
- RHEED
- Residual gas analyzer
- IR pyrometer
- Laser interferometer
- Bayard-Alpert Beam Flux Monitor
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PROCESS CONTROL
- Special software
- In-situ process control system
- Growth manipulator remote control
- Graphic visualization of all control and monitoring parameters
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* when using phase separator, depending on quantity of operating effusion cells, substrate temperature, as well as the operating mode, etc.
- Valved cracker sources for As, Sb, P
- CBr gas injector with heating capability
- N2 plasma source
- Single filament effusion cells
- Effusion cells for Al, Ga, In, etc. with dual filament (SUMBO or conic crucibles)
- Doping cells for Si, Be, Mg, etc.
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