SYSTEM CAPACITY   1×Ø100mm 1×Ø150mm
GROWTH CHAMBER   Ultimate pressure <5∙10-11Torr 10 or 12 shuttered ports for sources LN2 consumption less than 20-25 l/h*	SOURCES   Valved cracker sources for As, Sb, P CBr4 gas injector with heating capability N2 plasma source Single filament effusion cells Effusion cells for Al, Ga, In, etc. With dual filament (SUMO or conic crucibles) Doping cells for Si, Be, Mg, etc.
LOAD-LOCK CHAMBER   Manual/semi-automatic loading Quick access door with inspection viewport Storage cassette for substrate holders for up to 8 positions Substrate holders pre-heating system Inert atmosphere glove box hermetically connected to quick access door	GROWTH MANIPULATOR   PBN/PG/PBN heater providing high temperature uniformity and heating/cooling rate dynamics Substrate heating up to 1200°C Adjustable source-to-substrate distance Substrate holder rotation speed up to 1rps
BUFFER CHAMBER   Storage cassette for substrate holders for up to 7 positions PBN/PG/PBN heater providing high temperature uniformity and heating/cooling rate dynamics Substrate heating up to 650°C Water-cooling system	VACUUM SYSTEM   Main LN2 cryopanel surrounding the epitaxial growth zone Additional LN2 cryopanel surrounding the growth manipulator Pumping system configuration depends on STE35 system application (UHV cryogenic, ion, corrosive-resistant turbomolecular pumps, scroll forepump) Bayard-Alpert vacuum gauge Pirani vacuum gauge
ANALYTIC SYSTEM   RHEED  Residual gas analyzer IR pyrometer Laser interferometer Bayard-Alpert Beam Flux Monitor	PROCESS CONTROL   Special software In-situ process control system Growth manipulator remote control Graphic visualization of all control and monitoring parameters

* when using phase separator, depending on quantity of operating effusion cells, substrate temperature, as well as the operating mode, etc.