STE3N Series MBE Systems for III-Nitrides growth

Home Products Molecular-Beam Epitaxy Systems (MBE)

STE3N Advanced platform for A3N semiconductor compounds growth

Advanced STE3N platform is specially designed with consideration to specific A3N materials growth on substrates up to Ø150mm.

STE3N systems are intended for R&D as well as pilot production and ensure extremely wide range of available growth parameters (effective flux nitrogen, max substrate temperature, process vacuum level, etc.).

Patented design of key components provides extremely high temperatures on the substrate (>1200°C) as well as reliable work of heating
stage during a long growth cycle. It allows growing high-quality thick AlN/AlGaN buffer layers using ammonia as an active nitrogen source.

STE3N systems are optionally equipped with nitrogen plasma source, which can be used in combination with ammonia injector for growing active layers of InGaN, InAlN and AlGaN:Mg.

STE3N provides growth of active layers with extremely low dislocation density, record for MBE.

SYSTEM CAPACITY

1×Ø100mm

1×Ø150mm

GROWTH CHAMBER

Ultimate pressure <5∙10^-11Torr
7, 8 or 10 ports for sources with shutters
LN2consumption less than 25-35 l/h*

SOURCES

NH3 gas injector with heating capability
N2 plasma source
Single filament effusion cells
Special "creeping-free" design effusion cells for Al, Ga, In
Doping cells for Si, Mg

LOAD-LOCK CHAMBER

Manual/semi-automatic loading
Quick access door with inspection viewport
Storage cassette for substrate holders for up to 8 positions
Inert atmosphere glove box hermetically connected to quick access door

GROWTH MANIPULATOR

PBN/PG/PBN heater providing high temperature uniformity and heating/cooling rate dynamics
Substrate heating up to 1200°C
Adjustable source-to-substrate distance
Substrate holder rotation speed up to 1rps

BUFFER CHAMBER

Storage cassette for substrate holders for up to 7 positions
PBN/PG/PBN heater providing high temperature uniformity and heating/cooling rate dynamics
Substrate heating up to 1100°C
Water-cooling system

VACUUM SYSTEM

Single LN2 cryopanel
Pumping system configuration depends on STE3N system application (cryogenic, sublimation, ion, corrosive-resistant turbomolecular pumps, scroll forepump)
Bayard-Alpert vacuum gauge
Pirani vacuum gauge

ANALYTIC SYSTEM

RHEED
Residual gas analyzer
IR pyrometer
Laser interferometer
Bayard-Alpert Beam Flux Monitor

PROCESS CONTROL

Special software
In-situ process control system
Growth manipulator remote control
Graphic visualization of all control and monitoring parameters

* when using phase separator, depending on quantity of operating effusion cells, substrate temperature, as well as the operating mode, etc.

**optional

7/8/10 ports for sources
Two- or three- chamber configuration
Adjustable source-to-substrate distance
NH3-MBE and PA-MBE operating modes
GaN epi-layers comparable in quality with MOCVD ones grown on mismatched substrates
Patented Al source design with extended lifecycle
Patented designs of the substrate holder and heating node of the growth manipulator provides high heating uniformity of any types of substrates