STE3N Advanced platform for A3N semiconductor compounds growth
Advanced STE3N platform is specially designed with consideration to specific A3N materials growth on substrates up to Ø150mm.
STE3N systems are intended for R&D as well as pilot production and ensure extremely wide range of available growth parameters (effective flux nitrogen, max substrate temperature, process vacuum level, etc.).
Patented design of key components provides extremely high temperatures on the substrate (>1200°C) as well as reliable work of heating
STE3N systems are optionally equipped with nitrogen plasma source, which can be used in combination with ammonia injector for growing active layers of InGaN, InAlN and AlGaN:Mg.
STE3N provides growth of active layers with extremely low dislocation density, record for MBE.
* when using phase separator, depending on quantity of operating effusion cells, substrate temperature, as well as the operating mode, etc.