SYSTEM CAPACITY   1×Ø3’’
GROWTH CHAMBER   Ultimate pressure <5∙10-11Torr 10 shuttered ports for sources 4 non-shuttered ports for in-situ analytics tools LN2 consumption less than 10-15 l/h*	SOURCES   Valved cracker sources for As, Sb, P NH3 or CBr4 gas injector with heating capability N2 plasma source Single filament effusion cells Effusion cells for Al, Ga, In, etc. With dual filament (SUMO or conic crucibles) Doping cells for Si, Be, Mg, etc.
LOAD-LOCK CHAMBER   Manual loading Storage cassette for substrate holders for up to 3 positions Inert atmosphere glove box hermetically connected to quick access door	GROWTH MANIPULATOR   PBN/PG/PBN heater providing high temperature uniformity and heating/cooling rate dynamics Substrate heating up to 1200°C Substrate holder rotation speed up to 1rps
BUFFER CHAMBER   Storage cassette for substrate holders for up to 6 positions PBN/PG/PBN heater providing high temperature uniformity and heating/cooling rate dynamics Substrate heating up to 800°C Water-cooling system	VACUUM SYSTEM   Single LN2 cryopanel Pumping system configuration depends on STE75 system application (cryogenic, sublimation, ion, corrosive-resistant turbomolecular pumps, scroll forepump) Bayard-Alpert vacuum gauge Pirani vacuum gauge
ANALYTIC SYSTEM   RHEED with high definition video camera Residual gas analyzer IR pyrometer Laser interferometer Bayard-Alpert Beam Flux Monitor	PROCESS CONTROL   Special software In-situ process control system Growth manipulator remote control Graphic visualization of all control and monitoring parameters

* when using phase separator, depending on quantity of operating effusion cells, substrate temperature, as well as the operating mode, etc.