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STE RTP150 Rapid thermal processing system for vacuum and controlled gas environment

STE RTP150 systems are intended for long-time processing of semiconductor wafers in different types of atmospheres at temperatures up to 1300°C.

SYSTEM CAPACITY

 

  • 1×Ø150mm

REACTOR


  • Heater based on halogen lamps
  • Graphite or quartz heat-compensating table 
  • Ultimate pressure <10Torr
  • Heater and annealing wafer working volumes separation 
  • Max heating temperature up to 1300°C
  • Temperature control by thermocouple and IR pyrometer

PROCESS CONTROL


  • Process automatization
  • Programming and storage of technological recipes

 

  • Heating uniformity ±2%
  • Max heating rate:
    -30°C/sec with graphite table
    -150°C/sec with quartz table
  • High run-to-run reproducibility
  • Programming of the multi-stage anneling process

Ultimate pressure in the process chamber, Torr

<10;

<5×10-3 (Оption)

Pumping speed, m3/h

5

Water cooling of reactor walls

Yes

Max. wafer diameter, mm

150

Max. heating rate without graphite holder, °С/s

200

Max. heating rate with graphite holder, °С/s

50

Max. heating temperature, °С

1300

Heating uniformity for 100 mm wafer, %

±1 (up to 500°С)

±2 (up to 1300°С)

Annealing in vacuum

Yes

Annealing in oxygen

Yes

Quantity of thermocouples, pcs.

2

Optical pyrometer

Оption

Full automation of annealing process

Yes