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STE RTP150 Rapid thermal processing system for vacuum and controlled gas environment
STE RTP150 systems are intended for long-time processing of semiconductor wafers in different types of atmospheres at temperatures up to 1300°C.
SYSTEM CAPACITY
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REACTOR
- Heater based on halogen lamps
- Graphite or quartz heat-compensating table
- Ultimate pressure <10Torr
- Heater and annealing wafer working volumes separation
- Max heating temperature up to 1300°C
- Temperature control by thermocouple and IR pyrometer
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PROCESS CONTROL
- Process automatization
- Programming and storage of technological recipes
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- Heating uniformity ±2%
- Max heating rate:
-30°C/sec with graphite table -150°C/sec with quartz table
- High run-to-run reproducibility
- Programming of the multi-stage anneling process
Ultimate pressure in the process chamber, Torr
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<10;
<5×10-3 (Оption)
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Pumping speed, m3/h
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5
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Water cooling of reactor walls
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Yes
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Max. wafer diameter, mm
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150
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Max. heating rate without graphite holder, °С/s
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200
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Max. heating rate with graphite holder, °С/s
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50
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Max. heating temperature, °С
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1300
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Heating uniformity for 100 mm wafer, %
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±1 (up to 500°С)
±2 (up to 1300°С)
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Annealing in vacuum
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Yes
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Annealing in oxygen
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Yes
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Quantity of thermocouples, pcs.
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2
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Optical pyrometer
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Оption
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Full automation of annealing process
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Yes
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