STE EB71 Electron-beam evaporation system for various applications

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STE EB71 e-Beam evaporation system for high-quality thin-film deposition

The system was designed in accordance with “lab-to-fab” approach and is intended for both intensive R&D activities and pilot production.

System is intended for deposition on single wafer with diameter up to 200 mm as well as for 3×∅3” or 6×∅2” wafers installed on a spherical-profile holder, considering specific features of “lift-off” process.

• process chamber is made of stainless steel with ConFlat sealings, integrated wall water cooling and dry pumping system based on powerful ion pump 500 l/s
• system design was well proved in a semiconductor devices production for microwave electronics
• thickness non-uniformity is less than ±2,5% on the substrate holder diameter up to 200 mm with a specially developed “mask” technology
• ability to optimize material consumption by changing “substrate-to-evaporator” distance within 350 500 mm; in particular, the consumption of gold is 3÷4 g/μm with working distance of 350 mm

• contact resistance achieved for HEMTs based on GaAs/InGaAs/AlGaAs and GaN/AlGaN is 0.1÷0.25 and0.3÷0.5 Om×mm, respectively (after contact annealing in STE RTA100 system)
• transparent contact to p-GaN based on ITO thin films is developed
• Al deposition rate is not less than 60 Å/s
• W deposition rate is not less than 1 Å/s

Thickness distribution from the center of the holder ∅180 mm (3×∅3’’ wafers) for Ti layer, obtained at STE EB71 (rotation, “mask” technology).

Ultimate residual pressure in deposition chamber, Torr

<5×10^-9

Time for reaching pre-process vacuum (<5×10^-8 Torr) in the deposition chamber after loading of the wafer holder from the load-lock, not more, min

20

Ion Beam source with energy 20÷300 еV

Option

Heating of wafers during the process

500

900 (Option)

Deposition chamber bakeout temperature, ^°С

150

Wafers temperature monitoring by IR Pyrometer

Option

Water cooling of deposition chamber walls

Yes

Quantity of simultaneously processed wafers:

∅2’’

∅3’’

∅100 mm

∅150 mm

∅200 mm

free shape sample

6

3

1

1

1

Available

e-Beam evaporator cathode block power, kW

6

Accelerating voltage, kV

8

Quantity and volume of evaporator cells

6×7 cm³ or 4×15 cm³

Thermal evaporator in load lock chamber

Option

Screen system for evaporated metals collection

Yes

Visual monitoring of charge melting in crucible

Yes

Rotation of wafer holder during the process

Yes

“Evaporator-to-wafer” distance, mm

350÷500

Two-position water cooled Quartz Crystal Monitor (QCM) installed at the same surface as a wafer holder

Yes

Measured accuracy of deposited film thickness, nm

1

RGA

Option

Automatic control of e-Beam evaporator and auto-deposition by recipe

Yes

Thickness non-uniformity on the wafer holder up to ∅200 mm with a “mask” technology, better than, %

±2,5